Schottky diode with buried layer in gan materials

ABSTRACT

A semiconductor structure includes a III-nitride substrate characterized by a first conductivity type and having a first side and a second side opposing the first side, a III-nitride epitaxial layer of the first conductivity type coupled to the first side of the III-nitride substrate, and a plurality of III-nitride epitaxial structures of a second conductivity type coupled to the III-nitride epitaxial layer. The semiconductor structure further includes a III-nitride epitaxial formation of the first conductivity type coupled to the plurality of III-nitride epitaxial structures, and a metallic structure forming a Schottky contact with the III-nitride epitaxial formation and coupled to at least one of the plurality of III-nitride epitaxial structures.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/270,641, filed on Oct. 11, 2011, the disclosure of which isincorporated by reference herein in its entirety for all purposes.

BACKGROUND OF THE INVENTION

Power electronics are widely used in a variety of applications. Powerelectronic devices are commonly used in circuits to modify the form ofelectrical energy, for example, from AC to DC, from one voltage level toanother, or in some other way. Such devices can operate over a widerange of power levels, from milliwatts in mobile devices to hundreds ofmegawatts in a high voltage power transmission system. Despite theprogress made in power electronics, there is a need in the art forimproved electronics systems and methods of operating the same.

SUMMARY OF THE INVENTION

The present invention relates generally to electronic devices. Morespecifically, the present invention relates to forming edge terminationstructures using III-nitride semiconductor materials. Merely by way ofexample, the invention has been applied to methods and systems formanufacturing guard rings for semiconductor devices usinggallium-nitride (GaN) based epitaxial layers. The methods and techniquescan be applied to a variety of compound semiconductor systems such asSchottky diodes, PIN diodes, vertical junction field-effect transistors(JFETs), thyristors, and other devices.

According to one embodiment of the present invention, a method offabricating a diode in GaN materials is provided. The method includesproviding a n-type GaN substrate having a first surface and a secondsurface, forming a first n-type GaN epitaxial layer coupled to the firstsurface of the n-type GaN substrate, and forming a p-type GaN epitaxiallayer coupled to the first n-type GaN epitaxial layer. The methodfurther includes removing at least a portion of the p-type GaN epitaxiallayer to form a plurality of p-type device structures, forming a secondn-type GaN epitaxial layer coupled to the plurality of p-type devicestructures, and removing at least a portion of the second n-type GaNepitaxial layer to expose a portion of at least one p-type devicestructure. The method also includes forming a first metallic structureelectrically coupled to the exposed portion of the at least one p-typedevice structure and a remaining portion of the second n-type GaNepitaxial layer.

According to another embodiment of the present invention, a method offabricating an epitaxial structure is provided. The method includesproviding a III-nitride substrate of a first conductivity type, forminga first III-nitride epitaxial layer of the first conductivity typecoupled to a first surface of the III-nitride substrate, and forming asecond III-nitride epitaxial layer of a second conductivity type coupledto the first III-nitride epitaxial layer. The method also includesremoving at least a portion of the second III-nitride epitaxial layer toform a plurality of epitaxial structures of the second conductivitytype, forming a third III-nitride epitaxial layer of the firstconductivity type coupled to the plurality of epitaxial structures, andforming a first metallic structure electrically coupled to at least oneof the plurality of epitaxial structures and a portion of the thirdIII-nitride epitaxial layer.

According to yet another embodiment of the present invention, asemiconductor structure is provided. The semiconductor structureincludes a III-nitride substrate characterized by a first conductivitytype and having a first side and a second side opposing the first side,a III-nitride epitaxial layer of the first conductivity type coupled tothe first side of the III-nitride substrate, and a plurality ofIII-nitride epitaxial structures of a second conductivity type coupledto the III-nitride epitaxial layer. The semiconductor structure furtherincludes a III-nitride epitaxial formation of the first conductivitytype coupled to the plurality of III-nitride epitaxial structures, and ametallic structure forming a Schottky contact with the III-nitrideepitaxial formation and coupled to at least one of the plurality ofIII-nitride epitaxial structures.

Numerous benefits are achieved by way of the present invention overconventional techniques. For example, embodiments of the presentinvention enable the use of thicker III-nitride semiconductor layers invertical device configuration in comparison with conventionaltechniques, which can result in devices capable of operating at highervoltages and lower resistance than conventional devices. Additionally,the use of etching techniques detailed herein provides enhanced accuracyover conventional techniques, providing more precise placement of edgetermination structures. These and other embodiments of the invention,along with many of its advantages and features, are described in moredetail in conjunction with the text below and attached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1B are simplified cross-sectional diagrams of a portion of asemiconductor device, illustrating how edge termination structuresimprove the semiconductor device's performance, according to anembodiment of the present invention;

FIGS. 2-6, 7A, and 7B are simplified cross-sectional diagramsillustrating the fabrication of a Schottky diode in gallium-nitride(GaN) with edge termination structures formed through the etching of anepitaxial layer according to an embodiment of the present invention;

FIGS. 8-10 are simplified cross-sectional diagrams illustratingfabrication of a PIN diode in GaN with edge termination structuresformed through the etching of an epitaxial layer according to anotherembodiment of the present invention;

FIG. 11 is simplified cross-sectional diagram illustrating a verticalJFET with edge termination structures according to another embodiment ofthe present invention;

FIGS. 12-14 are simplified top-view illustrations showing differentexample embodiments of edge termination structures according toembodiments of the present invention;

FIG. 15 is a simplified flowchart illustrating a method of fabricating aSchottky diode with edge termination structures formed through theetching of an epitaxial layer according to an embodiment of the presentinvention;

FIG. 16 is a simplified flowchart illustrating a method of fabricating aPIN diode with edge termination structures formed through the etching ofan epitaxial layer according to an embodiment of the present invention;

FIGS. 17A-17F are cross-sectional diagrams of a process for forming aGaN Schottky diode with a buried p-type layer with edge terminationstructures, according to one embodiment;

FIGS. 18A-18E are cross-sectional diagrams of process for forming a GaNSchottky diode with a buried p-type layer with edge terminationstructures, according to another embodiment; and

FIG. 19 is an illustration of an overhead view of an embodiment of adiode formed in either FIGS. 17A-17F or FIGS. 18A-18E.

In the appended figures, similar components and/or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a dash and a secondlabel that distinguishes among the similar components. If only the firstreference label is used in the specification, the description isapplicable to any one of the similar components having the same firstreference label irrespective of the second reference label.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention relate to electronic devices. Morespecifically, the present invention relates to forming edge terminationstructures, such as floating guard rings, to provide edge terminationfor semiconductor devices. Merely by way of example, the invention hasbeen applied to methods and systems for manufacturing edge terminationstructures using gallium-nitride (GaN) based epitaxial layers. Themethods and techniques can be applied to form a variety of types of edgetermination structures that can provide edge termination to numeroustypes of semiconductor devices, including, but not limited to, junctionfield-effect transistors (JFETs), diodes, thyristors, verticalfield-effect transistors, thyristors, and other devices, includingmerged PIN, Schottky diodes such as those discussed in the applicationentitled “METHOD AND SYSTEM FOR FLOATING GUARD RINGS IN GAN MATERIALS”incorporated by reference hereinabove.

GaN-based electronic and optoelectronic devices are undergoing rapiddevelopment, and generally are expected to outperform competitors insilicon (Si) and silicon carbide (SiC). Desirable properties associatedwith GaN and related alloys and heterostructures include high bandgapenergy for visible and ultraviolet light emission, favorable transportproperties (e.g., high electron mobility and saturation velocity), ahigh breakdown field, and high thermal conductivity. In particular,electron mobility, μ, is higher than competing materials for a givenbackground doping level, N. This provides low resistivity, ρ, becauseresistivity is inversely proportional to electron mobility, as providedby equation (1):

$\begin{matrix}{{\rho = \frac{1}{q\; \mu \; N}},} & (1)\end{matrix}$

where q is the elementary charge.

Another superior property provided by GaN materials, includinghomoepitaxial GaN layers on bulk GaN substrates, is high criticalelectric field for avalanche breakdown. A high critical electric fieldallows a larger voltage to be supported over smaller length, L, than amaterial with a lower critical electric field. A smaller length forcurrent to flow together with low resistivity give rise to a lowerresistance, R, than other materials, since resistance can be determinedby equation (2):

$\begin{matrix}{{R = \frac{\rho \; L}{A}},} & (2)\end{matrix}$

where A is the cross-sectional area of the channel or current path.

As described herein, semiconductor devices utilizing edge terminationstructures are able to exploit the high critical electric field providedby GaN and related alloys and heterostructures. Edge terminationtechniques such as field plates and guard rings provide proper edgetermination by alleviating high fields at the edge of the semiconductordevice. When properly employed, edge termination allows a semiconductordevice to break down uniformly at its main junction rather thanuncontrollably at its edge.

According to embodiments of the present invention, gallium nitride (GaN)epitaxy on pseudo-bulk GaN substrates is utilized to fabricate edgetermination structures and/or semiconductor devices not possible usingconventional techniques. For example, conventional methods of growingGaN include using a foreign substrate such as silicon carbide (SiC).This can limit the thickness of a usable GaN layer grown on the foreignsubstrate due to differences in thermal expansion coefficients andlattice constant between the GaN layer and the foreign substrate. Highdefect densities at the interface between GaN and the foreign substratefurther complicate attempts to create edge termination structures forvarious types of semiconductor devices.

FIGS. 1A-1B are simplified cross-sectional diagrams of a portion of asemiconductor device, according to one embodiment, illustrating how theedge termination structures provided herein can be used to improve thesemiconductor device's performance using edge termination. FIG. 1Aillustrates a diode structure where a p-n junction is created between ap-type semiconductor layer 20 formed on an n-type semiconductorsubstrate 10, which can be an epitaxial layer. In this example, a metallayer 30 is also formed on the p-type semiconductor layer 20 to provideelectrical connectivity to the diode. Layer 30 may or may not share thesame edge as layer 20 in FIG. 1A and FIG. 1B.

Because the diode of FIG. 1A has no termination structures, itsperformance is reduced. The electric field 40 (represented in FIG. 1A aspotential lines), is crowded near the edge 50 of the diode, causingbreakdown at a voltage that can be much less than the parallel planebreakdown voltage for the diode. This phenomenon can be especiallydetrimental to the operation of high-voltage semiconductor devices.

FIG. 1B illustrates how edge termination structures 60 can be used toalleviate field crowding near the edge 50 of the diode. The edgetermination structures 60, which can be made of the same p-typesemiconductor material as the p-type semiconductor layer 20 of thediode, are placed near the diode and given voltages such that theelectric field 40 extends laterally beyond the edge 50 of the diode. Byextending the potential drop and reducing the electric field in thismanner, the edge termination structures 60 help enable the diode tooperate at a breakdown voltage much closer to its parallel planebreakdown voltage.

The number of edge termination structures 60 can vary. In someembodiments, a single edge termination structure may be sufficient. Inother embodiments, as much as seven termination structures or more canbe used. The number of termination structures also can impact voltagesat which each termination structure is biased. For example, the voltagefor each termination structure can be decreased with each successivetermination structure such that the termination structure farthest fromthe semiconductor device has the lowest voltage. For example, if thep-type semiconductor layer 20 is biased at 600V, the edge terminationstructures 60-1 and 60-2 can float to 400V and 200V, respectively. Ofcourse, voltages can vary, depending on the physical dimensions andconfiguration of the semiconductor device and edge terminationstructures 60. However, ensuring the outermost edge terminationstructure 60-2 has sufficiently low voltage such that the electric fieldat its edge is lower than the peak field at the semiconductor's mainjunction can help ensure the semiconductor device operates at or nearits parallel plane breakdown voltage.

The spaces 70 between edge termination structures 60 can vary. Accordingto some embodiments, width of the spaces 70 between edge terminationstructures 60 can increase as the distance from the semiconductorstructure increases. For example, as shown in the embodiment of FIG. 1B,the width of a first space 70-1 between the first edge terminationstructure 60-1 and the semiconductor structure can be smaller than thesecond space 70-2 between the second edge termination structure 60-2 andthe first edge termination structure 60-1. The width of the spaces 70can vary depending on application. According one embodiment, the widthof edge termination structures 60, ranging from 1 μm to 5 μm, can beapproximately the same for all edge termination structures 60, and thewidth of spaces 70 between edge termination structures 60 increases withincreased distance from the semiconductor device, ranging anywhere from0.5 μm to 6 μm. In other embodiments, other spacings are utilized asappropriate to the particular application.

Methods for the formation of edge termination structures in GaN andrelated alloys and heterostructures can differ from those used in othersemiconductors, such as Si. In Si, for example, edge terminationstructures often are formed by using implantation into the semiconductorsubstrate. On the other hand, in GaN and related alloys andheterostructures, using the techniques described herein, an epitaxiallayer can be formed on a substrate, then etched to provide the edgetermination structures 60. The formation of the edge terminationstructures 60 using etching can provide better spatial control thanimplantation, allowing better control of the position and spacing of theedge termination structures 60, and, ultimately, better control of theelectric field 40.

FIGS. 2-7B illustrate a process for creating a Schottky diode in GaNwith edge termination structures formed through the etching of anepitaxial layer. Referring to FIG. 2, a first GaN epitaxial layer 201 isformed on a GaN substrate 200 having the same conductivity type. Asindicated above, the GaN substrate 200 can be a pseudo-bulk or bulk GaNmaterial on which the first GaN epitaxial layer 201 is grown. Dopantconcentrations (e.g., doping density) of the GaN substrate 200 can vary,depending on desired functionality. For example, a GaN substrate 200 canhave an n+ conductivity type, with dopant concentrations ranging from1×10¹⁷ cm⁻³ to 1×10¹⁹ cm⁻³. Although the GaN substrate 200 isillustrated as including a single material composition, multiple layerscan be provided as part of the substrate. Moreover, adhesion, buffer,and other layers (not illustrated) can be utilized during the epitaxialgrowth process. One of ordinary skill in the art would recognize manyvariations, modifications, and alternatives.

The properties of the first GaN epitaxial layer 201 can also vary,depending on desired functionality. The first GaN epitaxial layer 201can serve as a drift region for the Schottky diode, and therefore can bea relatively low-doped material. For example, the first GaN epitaxiallayer 201 can have an n− conductivity type, with dopant concentrationsranging from 1×10¹⁴ cm⁻³ to 1×10¹⁸ cm⁻³. Furthermore, the dopantconcentration can be uniform, or can vary, for example, as a function ofthe thickness of the drift region.

The thickness of the first GaN epitaxial layer 201 can also varysubstantially, depending on the desired functionality. As discussedabove, homoepitaxial growth can enable the first GaN epitaxial layer 201to be grown far thicker than layers formed using conventional methods.In general, in some embodiments, thicknesses can vary between 0.5 μm and100 μm, for example. In other embodiments thicknesses are greater than 5μm. Resulting parallel plane breakdown voltages for the Schottky diode100 can vary depending on the embodiment. Some embodiments provide forbreakdown voltages of at least 100V, 300V, 600V, 1.2 kV, 1.7 kV, 3.3 kV,5.5 kV, 13 kV, or 20 kV.

Different dopants can be used to create n- and p-type GaN epitaxiallayers and structures disclosed herein. For example, n-type dopants caninclude silicon, oxygen, or the like. P-type dopants can includemagnesium, beryllium, calcium zinc, or the like.

FIG. 3 illustrates the formation of a second GaN epitaxial layer 301above the first GaN epitaxial layer 201. The second GaN epitaxial layer301, from which edge termination structures are eventually formed, canhave a conductivity type different than the first GaN epitaxial layer201. For instance, if the first GaN epitaxial layer 201 is formed froman n-type GaN material, the second GaN epitaxial layer 301 will beformed from a p-type GaN material, and vice versa. In some embodiments,the second GaN epitaxial layer 301 used to form the edge terminationstructures is a continuous regrowth over portions of the first GaNepitaxial layer 201 with other portions of the structure, such asregions of other semiconductor devices, characterized by reduced or nogrowth as a result of the presence of a regrowth mask (not shown). Oneof ordinary skill in the art would recognize many variations,modifications, and alternatives.

The thickness of the second GaN epitaxial layer 301 can vary, dependingon the process used to form the layer and the device design. In someembodiments, the thickness of the second GaN epitaxial layer 301 isbetween 0.1 μm and 5 μm. In other embodiments, the thickness of thesecond GaN epitaxial layer 301 is between 0.3 μm and 1 μm.

The second GaN epitaxial layer 301 can be highly doped, for example in arange from about 5×10¹⁷ cm⁻³ to about 1×10¹⁹ cm⁻³. Additionally, as withother epitaxial layers, the dopant concentration of the second GaNepitaxial layer 301 can be uniform or non-uniform as a function ofthickness. In some embodiments, the dopant concentration increases withthickness, such that the dopant concentration is relatively low near thefirst GaN epitaxial layer 201 and increases as the distance from thefirst GaN epitaxial layer 201 increases. Such embodiments provide higherdopant concentrations at the top of the second GaN epitaxial layer 301where metal contacts can be subsequently formed. Other embodimentsutilize heavily doped contact layers (not shown) to form ohmic contacts.

One method of forming the second GaN epitaxial layer 301, and otherlayers described herein, can be through a regrowth process that uses anin-situ etch and diffusion preparation processes. These preparationprocesses are described more fully in U.S. patent application Ser. No.13/198,666, filed on Aug. 4, 2011, the disclosure of which is herebyincorporated by reference in its entirety.

FIG. 4 illustrates the formation of a first metallic structure 401 belowthe GaN substrate 200. The first metallic structure 401 can be one ormore layers of ohmic metal that serve as a contact for the cathode ofthe Schottky diode. For example, the metallic structure 401 can comprisea titanium-aluminum (Ti/Al) ohmic metal. Other metals and/or alloys canbe used including, but not limited to, aluminum, nickel, gold,combinations thereof, or the like. In some embodiments, an outermostmetal of the metallic structure 401 can include gold, tantalum,tungsten, palladium, silver, or aluminum, combinations thereof, and thelike. The first metallic structure 401 can be formed using any of avariety of methods such as sputtering, evaporation, or the like.

FIG. 5 is a simplified cross-sectional diagram illustrating the removalat least a portion of the second GaN epitaxial layer 301 to form edgetermination structures 501. As discussed in further detail below, edgetermination structures 501 can include any of a variety of structures,such as guard rings that circumscribe the Schottky diode to provide edgetermination. Additionally, as illustrated in FIG. 5, at least a portionof the second GaN epitaxial layer 301 is removed to form an exposedportion 510 of the first GaN epitaxial layer 201 with which the Schottkydiode can subsequently be formed. The removal can be performed by acontrolled etch using an etch mask (not shown but having the dimensionsof the edge termination structures 501) designed to stop atapproximately the interface between the second GaN epitaxial layer 301and the first GaN epitaxial layer 201. Inductively-coupled plasma (ICP)etching and/or other common GaN etching processes can be used. In theillustrated embodiment, the material removal process used to removeportions of the second GaN epitaxial layer 301 terminates at theinterface of layers 301 and layer 201, however, in other embodiments,the process terminates at a different depth, for example, extending intoor leaving a portion of the first GaN epitaxial layer 201.

FIG. 6 illustrates the formation of a second metallic structure 601 onthe exposed portion 510 of the first GaN epitaxial layer 201. The secondmetallic structure 601 can be one or more layers of metal and/or alloysto create a Schottky barrier with the first GaN epitaxial layer 201, andthe second metallic structure 601 further can overlap portions of thenearest edge termination structure 501-1. The second metallic structure601 can be formed using a variety of techniques, including lift-offand/or deposition with subsequent etching, which can vary depending onthe metals used. In some embodiments, the contact metal structure 601can include nickel, platinum, palladium, silver, gold, and the like.

FIG. 7A illustrates the formation of metallic field plates 701 coupledto the outer edge termination structure 501-3. These metallic fieldplates 701 can be formed using the same techniques used to form thesecond metallic structure 601, and also can include similar metalsand/or alloys. In alternative embodiments, the metallic field plates 701can be located on any or all of the edge termination structures 501 andmay be coupled to an exposed surface of the first GaN epitaxial layer201, as shown in FIG. 7A. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

FIG. 7B illustrates the formation of additional field plate 701-2coupled to metallic structure 601, as an alternative to the embodimentof FIG. 7A. The metallic field plate 701-2 can be formed afterdielectric layer 702 is deposited and patterned. The pattern can beformed by a controlled etch using a etch mask (not shown but patternedto expose the metallic structure 601). In alternative embodiments, themetallic field plate 701-2 can be located on one or multiple edgetermination structures 501. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

Although some embodiments are discussed in terms of GaN substrates andGaN epitaxial layers, the present invention is not limited to theseparticular binary III-V materials and is applicable to a broader classof III-V materials, in particular III-nitride materials. Additionally,although a GaN substrate is illustrated in FIG. 2, embodiments of thepresent invention are not limited to GaN substrates. Other III-Vmaterials, in particular, III-nitride materials, are included within thescope of the present invention and can be substituted not only for theillustrated GaN substrate, but also for other GaN-based layers andstructures described herein. As examples, binary III-V (e.g.,III-nitride) materials, ternary III-V (e.g., III-nitride) materials suchas InGaN and AlGaN, quaternary III-nitride materials, such as AlInGaN,doped versions of these materials, and the like are included within thescope of the present invention.

The fabrication process illustrated in FIGS. 2-7B utilizes a processflow in which an n-type drift layer is grown using an n-type substrate.However, the present invention is not limited to this particularconfiguration. In other embodiments, substrates with p-type doping areutilized. Additionally, embodiments can use materials having an oppositeconductivity type to provide devices with different functionality. Thus,although some examples relate to the growth of n-type GaN epitaxiallayer(s) doped with silicon, in other embodiments the techniquesdescribed herein are applicable to the growth of highly or lightly dopedmaterial, p-type material, material doped with dopants in addition to orother than silicon such as Mg, Ca, Be, Ge, Se, S, O, Te, and the like.The substrates discussed herein can include a single material system ormultiple material systems including composite structures of multiplelayers. One of ordinary skill in the art would recognize manyvariations, modifications, and alternatives.

FIGS. 8-10, illustrate a process for creating a PIN diode in GaN withedge termination structures formed through the etching of an epitaxiallayer. The process can begin with the same steps of providing a GaNsubstrate 200, a first GaN epitaxial layer 201, a second GaN epitaxiallayer 301, and a first metallic structure 401, as shown in FIGS. 2-4.The structure properties, such as dopant concentrations and thicknesses,can vary from those of a Schottky diode, depending on desiredfunctionality.

FIG. 8 illustrating the removal at least a portion of the second GaNepitaxial layer 301 (illustrated in FIG. 3) to form edge terminationstructures 801 configured to provide edge termination to the PIN diode.Additionally, as illustrated in FIG. 8, at least a portion of the secondGaN epitaxial layer 301 is left, forming a device structure 810 withwhich the PIN diode can be made. For example, in one embodiment, thedevice structure 810 can have a p+ conductivity type, the first GaNepitaxial layer 201 can have a n− conductivity type, and the GaNsubstrate 200 can have an n+ conductivity type, forming the PIN layersof the PIN diode. As discussed in reference to FIG. 5, the removal canbe performed by a controlled etch using an etch mask (not shown buthaving the dimensions of the edge termination structures 801) designedto stop at approximately the interface between the second GaN epitaxiallayer 301 and the first GaN epitaxial layer 201. Inductively-coupledplasma (ICP) etching and/or other common GaN etching processes can beused.

FIG. 9 illustrates the formation of a second metallic structure 901 (inaddition to the metallic structure 401) electrically coupled to thedevice structure 810. This second metallic structure 901 can be formedusing the same techniques used to form the metallic structure 401, andalso can include similar metals and/or alloys. The second metallicstructure 901 electrically coupled to the device structure 810 can serveas an electrical contact (e.g., an anode) for the PIN diode.

FIG. 10 illustrates the formation of metallic field plates 1001 coupledto an outer edge termination structure 801-2, similar to the metallicfield plates 701-1 described in reference to FIG. 7A. These metallicfield plates 1001 can be formed using the same techniques used to formthe metallic structures 401 and 901, and also can include similar metalsand/or alloys. In alternative embodiments, the metallic field plates1001 can be located on any or all of the edge termination structures801, and may be coupled to an exposed surface of the first GaN epitaxiallayer 201, as shown in FIG. 10. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

FIG. 11 is a simplified cross section of a vertical JFET with edgetermination structures 1101, which can be formed using epitaxialregrowth and etching, as described herein. The vertical JFET can includea GaN substrate 200, first GaN epitaxial layer 201, and first metallicstructure 401, similar to those in the structures discussed previously.Here, first metallic structure 401 can function as a drain contact ofthe vertical JFET. Additionally, the JFET can include a channel region1110, which can be formed through epitaxial regrowth and have a lowdopant concentration similar to the first GaN epitaxial layer 201,having the same conductivity type. Furthermore, a source region 1120 canbe formed from an epitaxial layer of the same conductivity type as thechannel region 1110 and the first GaN epitaxial layer 201. Gate regions1130 can be formed from the same epitaxial growth or regrowth as theedge termination structures 1101, which has an opposite conductivitytype as the first GaN epitaxial layer 201. Finally, ohmic metal contacts1140 and 1150 can be provided on the gate regions 1130 and the sourceregion 1120 to provide gate and source contacts, respectively.

For example, in some embodiments, the GaN substrate 200 can have an n+conductivity type with dopant concentrations ranging from 1×10¹⁷ cm⁻³ to1×10¹⁹ cm⁻³, and the first GaN epitaxial layer 201 can have a n−conductivity type, with dopant concentrations ranging from 1×10¹⁴ cm⁻³to 1×10¹⁸ cm⁻³. The thickness of the first GaN epitaxial layer 201 canbe anywhere from 0.5 μm and 100 μm or over 100 μm, depending on desiredfunctionality and breakdown voltage. The channel region 1110, which canhave a n− conductivity type with a dopant concentration similar to thefirst GaN epitaxial layer 201, can be anywhere from between 0.1 μm and10 μm thick, and the width of the channel region 1110 (i.e., thedistance between gate regions 1130) for a normally-off vertical JFET canbe between 0.5 μm and 10 μm. For a normally-on vertical JFET, the widthof the channel region 1110 can be greater. The source region 1120 canhave a thickness of between 500 Å and 5 μm and an n-type conductivitywith a dopant concentration equal to or greater than 1×10¹⁸ cm⁻³. Thegate regions 1130 and the edge termination structures 1101-1, 1101-2,and 1101-3 can be from 0.1 μm and 5 μm thick and have a p+ conductivitytype with dopant concentrations in a range from about 1×10¹⁷ cm⁻³ toabout 1×10¹⁹ cm⁻³.

As demonstrated above, the edge termination structures described hereincan provide edge termination to a variety of types of semiconductordevices. FIGS. 12-14 are simplified top-view illustrations that providesome example embodiments.

FIG. 12 illustrates an embodiment of a transistor structure with edgetermination provided by three guard rings 1220. In this embodiment, theguard rings 1220 and gate structure 1240 can be made of a p+GaNepitaxial material formed on a drift region 1210 comprised of n− GaNepitaxial layer. Multiple source regions 1230 can be made of a n+GaNepitaxial material formed on n− GaN epitaxial channel regions locatedbetween the gates.

FIG. 13 illustrates another embodiment of a transistor structure withedge termination provided by three guard rings 1320. Similar to theembodiment shown in FIG. 12, the guard rings 1320 and gate structure1340 can be made of a p+GaN epitaxial material formed on a drift region1310 comprised of n− GaN epitaxial layer. A source region 1330 can bemade of a n+GaN epitaxial material formed on n− GaN epitaxial channelregion located between the gates formed from the gate structure 1340.

FIG. 14 illustrates yet another embodiment of a transistor structuresimilar to the embodiment shown in FIG. 13, illustrating how edgetermination structures, such as guard rings 1420, can shaped differentlyto accommodate differently-shaped semiconductor structures. Again, guardrings 1420 and gate structure 1440 can be made of a p+GaN epitaxialmaterial formed on a drift region 1410 comprised of n− GaN epitaxiallayer. A source region 1430 can be made of a n+GaN epitaxial material onn− GaN epitaxial channel region located between the gates formed fromthe gate structure 1440.

FIG. 15 is a simplified flowchart illustrating a method of fabricating aSchottky diode with edge termination structures in a III-nitridematerial, according to an embodiment of the present invention. Referringto FIG. 15, a III-nitride substrate is provided (1510), characterized bya first conductivity type and a first dopant concentration. In anembodiment, the III-nitride is a GaN substrate with n+ conductivitytype. The method also includes forming a first III-nitride epitaxiallayer (e.g., an n-type GaN epitaxial layer) coupled to the III-nitridesubstrate (1520). The III-nitride substrate and first III-nitrideepitaxial layer are characterized by a first conductivity type, forexample n-type conductivity, and the first III-nitride epitaxial layeris characterized by a second dopant concentration less than the firstdopant concentration. Using the homoepitaxy techniques described herein,the thickness of the first III-nitride epitaxial layer can be thickerthan available using conventional techniques, for example, between about3 μm and about 100 μm.

The method further includes forming a second III-nitride epitaxial layercoupled to the first III-nitride epitaxial layer (1530). The secondIII-nitride epitaxial layer (e.g., a GaN epitaxial layer of a p+conductivity type) is characterized by a second conductivity type. Atleast a portion of the second III-nitride epitaxial layer is removed toform an exposed portion of the first III-nitride epitaxial layer andform at least one edge termination structure (1540). As illustrated inFIGS. 12-14 and discussed elsewhere herein, any number between one toseven or more edge termination structures can be formed to provide edgetermination for the Schottky diode. Furthermore, the edge terminationstructures can be shaped any of a variety of ways, according to thephysical characteristics of the Schottky diode and other considerations.

Additionally, the method includes forming a metallic structureelectrically coupled to the first III-nitride epitaxial layer to createa Schottky contact (1550) between the metallic structure and the firstIII-nitride epitaxial layer, which forms the drift layer. The metallicstructure further can be deposited and patterned to overlap the first(i.e., closest) edge termination structures. A optional metallic fieldplate coupled to at least one termination structure (1560) is providedto alter or enhance edge termination, depending on desiredfunctionality. Moreover, as illustrated in FIG. 7A, a backside ohmicmetal can formed on a first surface of the III-nitride substrateopposing a surface of the III-nitride substrate coupled with the firstIII-nitride epitaxial layer, providing a cathode for the Schottky diode.The various epitaxial layers used to form the Schottky diode and edgetermination structures do not have to be uniform in dopant concentrationas a function of thickness, but may utilize varying doping profiles asappropriate to the particular application.

It should be appreciated that the specific steps illustrated in FIG. 15provide a particular method of fabricating a Schottky diode with edgetermination structures according to an embodiment of the presentinvention. Other sequences of steps may also be performed according toalternative embodiments. For example, alternative embodiments of thepresent invention may perform the steps outlined above in a differentorder. Moreover, the individual steps illustrated in FIG. 15 may includemultiple sub-steps that may be performed in various sequences asappropriate to the individual step. Furthermore, additional steps may beadded or removed depending on the particular applications. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

FIG. 16 is a simplified flowchart illustrating a method of fabricating aPIN diode with edge termination structures in a III-nitride material,according to an embodiment of the present invention. Similar to themethod illustrated in FIG. 15, a III-nitride substrate is provided(1610), having a first conductivity type and a first dopantconcentration. The method also includes forming a first III-nitrideepitaxial layer (e.g., an n-type GaN epitaxial layer) coupled to theIII-nitride substrate (1620). Here, the first III-nitride epitaxiallayer can be an intrinsic or very lightly doped layer to function as theintrinsic region of the PIN diode.

The method further includes forming a second III-nitride epitaxial layercoupled to the first III-nitride epitaxial layer (1630). The secondIII-nitride epitaxial layer (e.g., a GaN epitaxial layer of a p+conductivity type) is characterized by a second conductivity type. Atleast a portion of the second III-nitride epitaxial layer is removed toform an exposed portion of the first III-nitride epitaxial layer, atleast one edge termination structure, and a device structure (1640).Depending on the conductivity type of the second III-nitride epitaxiallayer, the device structure forms the P or N region of the PIN diode.

The method includes forming a metallic structure electrically coupled tothe device structure (1650) to create an ohmic metal contact of the PINdiode. Additionally, a metallic field plate can be coupled to at leastone termination structure (1660) to alter or enhance edge termination,depending on desired functionality. Moreover, similar to the method forcreating the Schottky diode, the method can include forming a backsideohmic metal coupled to the III-nitride substrate. The various epitaxiallayers used to form the PIN diode and edge termination structures do nothave to be uniform in dopant concentration as a function of thickness,but may utilize varying doping profiles as appropriate to the particularapplication.

It should be appreciated that the specific steps illustrated in FIG. 16provide a particular method of fabricating a PIN diode with edgetermination structures according to an embodiment of the presentinvention. Other sequences of steps may also be performed according toalternative embodiments. For example, alternative embodiments of thepresent invention may perform the steps outlined above in a differentorder. Moreover, the individual steps illustrated in FIG. 16 may includemultiple sub-steps that may be performed in various sequences asappropriate to the individual step. Furthermore, additional steps may beadded or removed depending on the particular applications. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

FIGS. 17A-17F are cross-sectional diagrams of a process for forming aGaN Schottky diode with a buried p-type layer with edge terminationstructures, according to one embodiment. The process can begin at FIG.17A with a structure similar to that shown in FIG. 3, with a first GaNepitaxial layer 201 coupled to a GaN substrate 200, and a second GaNepitaxial layer 301 coupled to the first GaN epitaxial layer 201. Inthis embodiment, the first GaN epitaxial layer 201 and the GaN substrate200 are have n-type conductivity, and the second GaN epitaxial layer 301has a p-type conductivity. The physical properties of the structuresshown in FIG. 17A can be similar to corresponding structures describedin respect to in FIG. 3.

In FIG. 17B, the second GaN epitaxial layer 301 is etched to formmultiple epitaxial structures 1701, and in FIG. 17C, an n-type epitaxialregrowth layer 1702 for passivation is formed over the epitaxialstructures 1701. Here, certain of the epitaxial structures 1701 can besized and spaced to form edge termination structures 1701-1, while otherepitaxial structures 1701 will be used to form p-type contacts 1701-2and buried structures 1701-3. For example, according to someembodiments, the p-type contacts 1701-2 can range from 2 μm to 20 μmwide, and the buried structures 1701-3 can range from 0.5 μm to 10 μmwide. Additionally, according to some embodiments, the distance betweenburied structures 1701-3 and/or contacts 1701-2 can range from 0.2 μm to10 μm in length. In this embodiment, the n-type epitaxial regrowth layer1702 can further relax potential between floating p-type edgetermination structures 1701-1. One of ordinary skill in the art wouldrecognize such passivation can be utilized in other embodiments providedherein.

FIG. 17D illustrates the formation of a first metallic structure 401below the GaN substrate 200. The first metallic structure 401 can be oneor more layers of ohmic metal that serve as a contact for the cathode ofthe GaN Schottky diode. The physical properties of the first metallicstructure 401 can be similar to the corresponding structure described inrespect to FIG. 4.

FIG. 17E illustrates removal of the n-type epitaxial regrowth layer 1702to form openings 1703, exposing at least a portion of the p-typecontacts 1701-2. The removal can be performed by a controlled etch usingan etch mask (not shown) designed to stop at approximately the topsurface of the p-type contacts 1701-2. In other embodiments, the processterminates at a different depth, for example, extending into p-typecontacts 1701-2. Inductively-coupled plasma (ICP) etching and/or othercommon GaN etching processes can be used.

As shown in FIG. 17F, a Schottky metal 1704 then can be coupled withp-type contacts 1701-2 and a portion 1705 of the n-type epitaxialregrowth layer above the buried structures 1701-3. The Schottky metal1704 can be formed using a variety of techniques, including lift-offand/or deposition with subsequent etching, which can vary depending onthe metals used. In some embodiments, the Schottky metal 1704 caninclude nickel, platinum, palladium, silver, gold, and the like.

The formation of the Schottky metal 1704 creates a Schottky contact withthe portion 1705 of the n-type epitaxial regrowth layer. Because theportion 1705 of the n-type epitaxial regrowth layer can be formed byregrowth, the surface to which the Schottky metal 1704 is coupled doesnot require the cleaning and/or annealing steps typically required tocorrect damage due to other processes, such as dry etching. Because theSchottky metal 1704 also forms ohmic contact with p-type contacts1701-2, a merged P-i-N Schottky (MPS) diode is formed, havingedge-termination provided by edge termination structures 1701-1 andn-type passivation portions 1706. In addition to the low capacitance andvery low leakage current in the off state provided by the MPS structure,performance of the diode is further enhanced with the inclusion ofburied structures 1701-3, which can serve to pinch off current flowunder reverse bias.

In a specific embodiment, at least a portion of the p-type GaN epitaxiallayer can be removed, a process that can include forming a plurality ofp-type device structures using a remaining portion of the p-type GaNepitaxial layer. In this specific embodiment, the fabrication processincludes forming an n-type GaN passivation layer coupled to the at leastone edge termination structure and the plurality of p-type devicestructures, removing a portion of the n-type GaN passivation layer toexpose a portion of at least one p-type device structure, and forming asecond metallic structure electrically coupled to the exposed portion ofthe at least one p-type device structure and a remaining portion of then-type GaN passivation layer. Semiconductor structures formed accordingto embodiments of the present invention can thus include a plurality ofa III-nitride epitaxial structures of a second conductivity type coupledto the III-nitride epitaxial layer. The semiconductor structures canalso include a III-nitride passivation layer of the first conductivitytype coupled to the plurality of a III-nitride epitaxial structures anda second metallic structure electrically coupled to at least one of theplurality of III-nitride epitaxial structures and a portion of theIII-nitride passivation layer.

FIGS. 18A-18E are cross-sectional diagrams of another process forforming a GaN Schottky diode with a buried p-type layer with edgetermination structures. The process can begin at FIG. 18A with astructure similar to that shown in FIGS. 3 and 17A, with a first GaNepitaxial layer 201 coupled to a GaN substrate 200, and a second GaNepitaxial layer 301 coupled to the first GaN epitaxial layer 201. Inthis embodiment, the first GaN epitaxial layer 201 and the GaN substrate200 are have n-type conductivity, and the second GaN epitaxial layer 301has a p-type conductivity. The physical properties of the structuresshown in FIG. 18A can be similar to corresponding structures describedin respect to in FIGS. 3 and 17A.

In FIG. 18B, the second GaN epitaxial layer 301 is etched to formmultiple epitaxial structures 1701, and in FIG. 18C, an n-type epitaxialregrowth layer 1801 for passivation is selectively formed over theepitaxial structures 1701. Here, certain of the epitaxial structures1701 can be sized and spaced to form edge termination structures 1701-1,while other epitaxial structures 1701 will be used to form p-typecontacts 1701-2 and buried structures 1701-3. For example, according tosome embodiments, the p-type contacts 1701-2 can range from 2 μm to 20μm wide, and the buried structures 1701-3 can range from 0.5 μm to 10 μmwide. Additionally, according to some embodiments, the distance betweenburied structures 1701-3 and/or contacts 1701-2 can range from 0.2 μm to10 μm in length. In this embodiment, the n-type epitaxial regrowth layer1801 can further relax potential between floating p-type edgetermination structures 1701-1. One of ordinary skill in the art wouldrecognize such passivation can be utilized in other embodiments providedherein. Additional description related to selective regrowth ofIII-nitride layers is provided in commonly assigned U.S. patentapplication Ser. No. 13/225,345 filed Sep. 2, 2011 and herebyincorporated by reference in its entirety for all purposes.

FIG. 18D illustrates the formation of a first metallic structure 401below the GaN substrate 200. The first metallic structure 401 can be oneor more layers of ohmic metal that serve as a contact for the cathode ofthe GaN Schottky diode. The physical properties of the first metallicstructure 401 can be similar to the corresponding structure described inrespect to FIG. 4.

As shown in FIG. 18E, and similar to FIG. 17F, a Schottky metal 1704then can be formed and electrically coupled to p-type contacts 1701-2and a portion 1801-1 of the n-type epitaxial regrowth layer above theburied structures 1701-3. The Schottky metal 1704 can be formed using avariety of techniques, including lift-off and/or deposition withsubsequent etching, which can vary depending on the metals used. In someembodiments, the Schottky metal 1704 can include nickel, platinum,palladium, silver, gold, and the like. The properties and advantages ofthe resulting structure are similar to those discussed in reference toFIG. 17A-17F.

FIG. 19 illustrates an overhead view of an embodiment of a diode formedin either FIGS. 17A-17F or FIGS. 18A-18E. (For ease of viewing, then-type epitaxial regrowth layer 1702 is omitted.) Here, floating guardrings 1920 are formed on a drift layer 1910, as well as the buriedp-type structures 1930. After forming openings in the n-type epitaxialregrowth layer 1702 (not shown) to expose one or more of the p-typestructures to form contacts (corresponding to p-type contacts 1701-2 ofFIG. 17E), a Schottky metal 1940 is deposited.

One of ordinary skill in the art would recognize many variations,modifications, and alternatives to the examples provided herein. Asillustrated herein, edge termination structures can be provided in anyof a variety of shapes and forms, depending on physical features of thesemiconductor device for which the edge termination structures provideedge termination. For instance, in certain embodiments, edge terminationstructures may not circumscribe the semiconductor device. Additionallyor alternatively, conductivity types of the examples provided herein canbe reversed (e.g., replacing an n-type semiconductor material with ap-type material, and vice versa), depending on desired functionality.Moreover, embodiments provided herein using GaN can use otherIII-nitride materials in addition or as an alternative to GaN. Othervariations, alterations, modifications, and substitutions arecontemplated.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

What is claimed is:
 1. A method of fabricating a diode in galliumnitride (GaN) materials, the method comprising: providing a n-type GaNsubstrate having a first surface and a second surface; forming a firstn-type GaN epitaxial layer coupled to the first surface of the n-typeGaN substrate; forming a p-type GaN epitaxial layer coupled to the firstn-type GaN epitaxial layer; removing at least a portion of the p-typeGaN epitaxial layer to form a plurality of p-type device structures;forming a second n-type GaN epitaxial layer coupled to the plurality ofp-type device structures; removing at least a portion of the secondn-type GaN epitaxial layer to expose a portion of at least one p-typedevice structure; and forming a first metallic structure electricallycoupled to the exposed portion of the at least one p-type devicestructure and a remaining portion of the second n-type GaN epitaxiallayer, wherein a lateral boundary of the first metallic structure issubstantially coincident with a point of contact between the firstmetallic structure and the exposed portion of the at least one p-typestructure.
 2. The method of claim 1 wherein the first metallic structureforms a Schottky contact with the remaining portion of the second n-typeGaN epitaxial layer.
 3. The method of claim 1 wherein the first metallicstructure forms an ohmic contact with the exposed portion of the atleast one p-type device structure.
 4. The method of claim 1 whereinforming the plurality of p-type device structures includes forming oneor more edge termination structures.
 5. The method of claim 4 whereinthe one or more edge termination structures circumscribe the firstmetallic structure.
 6. The method of claim 1 wherein forming the firstmetallic structure includes forming the first metallic structure suchthat one or more p-type device structures are disposed between the firstn-type GaN epitaxial layer and the first metallic structure.
 7. Themethod of claim 1 further comprising forming a second metallic structureelectrically coupled to the second surface of the n-type GaN substrate.8. The method of claim 1 wherein: the n-type GaN substrate ischaracterized by a first n-type dopant concentration; and the firstn-type GaN epitaxial layer is characterized by a second n-type dopantconcentration less than the first n-type dopant concentration.
 9. Amethod of fabricating an epitaxial structure, the method comprising:providing a III-nitride substrate of a first conductivity type; forminga first III-nitride epitaxial layer of the first conductivity typecoupled to a first surface of the III-nitride substrate; forming asecond III-nitride epitaxial layer of a second conductivity type coupledto the first III-nitride epitaxial layer; removing at least a portion ofthe second III-nitride epitaxial layer to form a plurality of epitaxialstructures of the second conductivity type; forming a third III-nitrideepitaxial layer of the first conductivity type coupled to the pluralityof epitaxial structures; and forming a first metallic structureelectrically coupled to at least one of the epitaxial structures and toa portion of the third III-nitride epitaxial layer, wherein a lateralboundary of the first metallic structure is substantially coincidentwith a point of contact between the first metallic structure and the atleast one epitaxial structure.
 10. The method of claim 9 wherein formingthe third III-nitride epitaxial layer comprises a selective regrowthprocess.
 11. The method of claim 9 further comprising removing at leasta portion of the third III-nitride epitaxial layer.
 12. The method ofclaim 9 wherein the first metallic structure is configured to form aSchottky contact with the third III-nitride epitaxial layer.
 13. Themethod of claim 9 wherein the first metallic structure forms an ohmiccontact with the at least one of the plurality of epitaxial structures.14. The method of claim 9 wherein forming the plurality of epitaxialstructures includes forming one or more edge termination structures. 15.The method of claim 9 wherein forming the first metallic structureincludes forming the first metallic structure such that one or moreepitaxial structures are disposed between the first III-nitrideepitaxial layer and the first metallic structure.
 16. The method ofclaim 9 further comprising forming a second metallic structureelectrically coupled to a second surface of the III-nitride substrate.17. The method of claim 9 wherein the first conductivity type is n-typeand the second conductivity type is p-type.
 18. A semiconductorstructure comprising: a III-nitride substrate characterized by a firstconductivity type and having a first side and a second side opposing thefirst side; a III-nitride epitaxial layer of the first conductivity typecoupled to the first side of the III-nitride substrate; a plurality ofIII-nitride epitaxial structures of a second conductivity type coupledto the III-nitride epitaxial layer; a III-nitride epitaxial formation ofthe first conductivity type coupled to the plurality of III-nitrideepitaxial structures; and a metallic structure forming a Schottkycontact with the III-nitride epitaxial formation and coupled to at leastone of the plurality of III-nitride epitaxial structures, wherein alateral boundary of the metallic structure is substantially coincidentwith a point of contact between the metallic structure and theIII-nitride epitaxial formation.
 19. The semiconductor structure ofclaim 18 wherein the first metallic structure forms an ohmic contactwith the at least one of the plurality of III-nitride epitaxialstructures.
 20. The semiconductor structure of claim 18 wherein theplurality of III-nitride epitaxial structures includes one or more edgetermination structures.
 21. The semiconductor structure of claim 18wherein one or more of the plurality of III-nitride epitaxial structuresis disposed between the III-nitride epitaxial layer and the metallicstructure.
 22. The semiconductor structure of claim 18 furthercomprising forming a second metallic structure electrically coupled tothe second side of the III-nitride substrate.